Abstract
In this paper, we demonstrate the capability to establish spin-polarized currents in doped (STO). The results are based on the study of charge and spin transport in STO layers doped by the reversible electromigration of oxygen atoms in resistive-switching vertical stacks. The formation of oxygen vacancies inside STO results in a metallic conductivity at temperatures K, above which a transition to an insulatinglike behavior is detected. A detailed theoretical analysis shows that the behavior of the metallic phase in our samples corresponds to the well-known state of the thermodynamically doped STO featuring the so-called bad metal behavior. Thus, our findings introduce this class of unconventional materials as valuable candidates for innovative spintronic devices.
1 More- Received 7 November 2022
- Revised 30 April 2023
- Accepted 14 June 2023
DOI:https://doi.org/10.1103/PhysRevResearch.5.033096
Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.
Published by the American Physical Society