Carrier-Envelope Phase-Controlled Quantum Interference of Injected Photocurrents in Semiconductors

T. M. Fortier, P. A. Roos, D. J. Jones, S. T. Cundiff, R. D. R. Bhat, and J. E. Sipe
Phys. Rev. Lett. 92, 147403 – Published 8 April 2004

Abstract

We demonstrate quantum interference control of injected photocurrents in a semiconductor using the phase stabilized pulse train from a mode-locked Ti:sapphire laser. Measurement of the comb offset frequency via this technique results in a signal-to-noise ratio of 40 dB (10 Hz resolution bandwidth), enabling solid-state detection of carrier-envelope phase shifts of a Ti:sapphire oscillator.

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  • Received 10 November 2003

DOI:https://doi.org/10.1103/PhysRevLett.92.147403

©2004 American Physical Society

Authors & Affiliations

T. M. Fortier, P. A. Roos, D. J. Jones*, and S. T. Cundiff

  • JILA, National Institute of Standards and Technology and the University of Colorado, Boulder, Colorado 80309-0440, USA

R. D. R. Bhat and J. E. Sipe

  • Department of Physics, University of Toronto, Toronto, Canada M5S 1A7

  • *Current address: Department of Physics and Astronomy, University of British Columbia, Vancouver, BC V6T 1Z1, Canada.
  • Electronic address: cundiffs@jila.colorado.edu Also staff member in the NIST Quantum Physics Division.

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Issue

Vol. 92, Iss. 14 — 9 April 2004

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