Gap-State Induced Photoluminescence Quenching of Phenylene Vinylene Oligomer and Its Recovery by Oxidation

Y. Park; V.-E. Choong; B. R. Hsieh; C. W. Tang; Y. Gao

doi:10.1103/PhysRevLett.78.3955

Gap-State Induced Photoluminescence Quenching of Phenylene Vinylene Oligomer and Its Recovery by Oxidation

Y. Park, V.-E. Choong, B. R. Hsieh, C. W. Tang, and Y. Gao

Phys. Rev. Lett. 78, 3955 – Published 19 May 1997

Abstract

We demonstrate that the gap states at the interface of Ca and a phenylene vinylene oligomer thin film are responsible for the dramatic quenching of its photoluminescence (PL). Upon oxidation of the Ca layer, the midgap states are removed, and the PL intensity recovers. From the cumulative Ca deposition and oxidation study, a 30 Å Ca oxide layer between the oligomer and the Ca metal prevents PL quenching due to metal induced midgap states. The implications of these results in the design and operation of organic light-emitting devices are discussed.

Received 18 October 1996

DOI:https://doi.org/10.1103/PhysRevLett.78.3955

Authors & Affiliations

Y. Park¹, V.-E. Choong¹, B. R. Hsieh², C. W. Tang³, and Y. Gao¹

¹Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627
²Xerox Corporation, 114-39D, 800 Phillips Road, Webster, New York 14580
³Eastman Kodak Company, Rochester, New York 14650