Raman scattering in metallic Si and Ge up to 50 GPa

Helmut Olijnyk
Phys. Rev. Lett. 68, 2232 – Published 6 April 1992
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Abstract

Optical phonons in metallic high-pressure phases of Si and Ge were studied up to 50 GPa by Raman scattering. Two Raman bands (LO, TO) were observed in the β-tin phase, one of which (LO) becomes soft on approaching the transition to primitive hexagonal. For hcp-Si there is one Raman-active mode (TO), and an additional mode is observed in the stability field of Si-VI. The available theoretical results agree within (10–20)% with the experimental results.

  • Received 11 December 1991

DOI:https://doi.org/10.1103/PhysRevLett.68.2232

©1992 American Physical Society

Authors & Affiliations

Helmut Olijnyk

  • Bayerisches Geoinstitut, Universität Bayreuth, Postfach 101 251, W-8580 Bayreuth, Federal Republic of Germany

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Issue

Vol. 68, Iss. 14 — 6 April 1992

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