Abstract
Crystalline B ribbons have been irradiated at low temperature with GeV heavy ions (Kr,Xe,U) in order to study the disordering process induced in this material by ion electronic energy loss. The atomic rearrangements produced by irradiation were monitored in situ via electrical resistance measurements and characterized after annealing at room temperature by electron diffraction. The results show a huge electrical resistivity increase above an electronic-energy-loss threshold, which can be ascribed to partial amorphization of the irradiated alloy.
- Received 23 April 1990
DOI:https://doi.org/10.1103/PhysRevLett.65.875
©1990 American Physical Society