Model for the <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msup><mrow><mrow><msub><mrow><mi>E</mi></mrow><mrow><mn>1</mn></mrow></msub></mrow></mrow><mrow><mo>′</mo></mrow></msup></mrow></math></span> Center in Si<span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi mathvariant="normal">O</mi></mrow><mrow><mn>2</mn></mrow></msub></mrow></math></span>

A. R. Ruffa

doi:10.1103/PhysRevLett.25.650

Model for the ${E_{1}}^{'}$ Center in Si $O_{2}$

A. R. Ruffa

Phys. Rev. Lett. 25, 650 – Published 7 September 1970

Abstract

A theoretical model is presented for both the permanent and transient ${E_{1}}^{'}$ centers in Si $O_{2}$ together with a mechanism for their optical excitation. The model presented involves the Heitler-London description of Si-O bonding. Experimental tests for verification of the model are discussed in some detail.