Dynamical Nonlinear Inversion of the Surface Photovoltage at Si(100)

Friedrich Roth, Johannes Mahl, Mario Borgwardt, Lukas Wenthaus, Felix Brausse, Valentin Garbe, Oliver Gessner, and Wolfgang Eberhardt
Phys. Rev. Lett. 132, 146201 – Published 3 April 2024

Abstract

A surface photovoltage (SPV) is observed whenever a doped semiconductor with non-negligible band bending is illuminated by light and charge carriers are excited across the band gap. The sign of the SPV depends on the nature of the doping, the amplitude of the SPV increases with the fluence of the light illumination up to a saturation value, which is determined by the doping concentration. We have investigated Si(100) samples with well-characterized doping levels over a wide range of illumination fluences. Surprisingly, the sign of the SPV upon illumination with 532 nm photons reverses for some p-doping concentrations at high fluences. This is a new effect associated with a crossover between electronic excitations in the bulk and at the surface of the semiconductor.

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  • Received 15 September 2022
  • Revised 2 January 2024
  • Accepted 14 February 2024

DOI:https://doi.org/10.1103/PhysRevLett.132.146201

© 2024 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Friedrich Roth1,2,*, Johannes Mahl3, Mario Borgwardt3, Lukas Wenthaus4, Felix Brausse3,‡, Valentin Garbe5, Oliver Gessner3, and Wolfgang Eberhardt4,†

  • 1Institute of Experimental Physics, TU Bergakademie Freiberg, 09599 Freiberg, Germany
  • 2Center for Efficient High Temperature Processes and Materials Conversion (ZeHS), TU Bergakademie Freiberg, 09599 Freiberg, Germany
  • 3Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
  • 4Center Center for Free-Electron Laser Science CFEL, Deutsches Elektronen-Synchrotron DESY, 22607 Hamburg, Germany
  • 5Institute of Applied Physics, TU Bergakademie Freiberg, 09599 Freiberg, Germany

  • *Corresponding author: friedrich.roth@physik.tu-freiberg.de
  • Corresponding author: wolfgang.eberhardt@cfel.de
  • Present address: European XFEL GmbH, Holzkoppel 4, 22869 Schenefeld, Germany.

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Vol. 132, Iss. 14 — 5 April 2024

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