Thermal Conductivity and Large Isotope Effect in GaN from First Principles

L. Lindsay, D. A. Broido, and T. L. Reinecke
Phys. Rev. Lett. 109, 095901 – Published 28 August 2012

Abstract

We present atomistic first principles results for the lattice thermal conductivity of GaN and compare them to those for GaP, GaAs, and GaSb. In GaN we find a large increase to the thermal conductivity with isotopic enrichment, 65% at room temperature. We show that both the high thermal conductivity and its enhancement with isotopic enrichment in GaN arise from the weak coupling of heat-carrying acoustic phonons with optic phonons. This weak scattering results from stiff atomic bonds and the large Ga to N mass ratio, which give phonons high frequencies and also a pronounced energy gap between acoustic and optic phonons compared to other materials. Rigorous understanding of these features in GaN gives important insights into the interplay between intrinsic phonon-phonon scattering and isotopic scattering in a range of materials.

  • Figure
  • Figure
  • Figure
  • Received 15 June 2012

DOI:https://doi.org/10.1103/PhysRevLett.109.095901

© 2012 American Physical Society

Authors & Affiliations

L. Lindsay1, D. A. Broido2, and T. L. Reinecke1

  • 1Naval Research Laboratory, Washington, D.C. 20375, USA
  • 2Department of Physics, Boston College, Chestnut Hill, Massachusetts 02467, USA

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 109, Iss. 9 — 31 August 2012

Reuse & Permissions
Access Options
CHORUS

Article Available via CHORUS

Download Accepted Manuscript
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×