Intrinsic Spin Hall Effect Induced by Quantum Phase Transition in HgCdTe Quantum Wells

Wen Yang, Kai Chang, and Shou-Cheng Zhang
Phys. Rev. Lett. 100, 056602 – Published 6 February 2008

Abstract

The spin Hall effect can be induced by both extrinsic impurity scattering and intrinsic spin-orbit coupling in the electronic structure. The HgTe/CdTe quantum well has a quantum phase transition where the electronic structure changes from normal to inverted. We show that the intrinsic spin Hall effect of the conduction band vanishes on the normal side, while it is finite on the inverted side. By tuning the Cd content, the well width, or the bias electric field across the quantum well, the intrinsic spin Hall effect can be switched on or off and tuned into resonance under experimentally accessible conditions.

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  • Received 22 October 2007

DOI:https://doi.org/10.1103/PhysRevLett.100.056602

©2008 American Physical Society

Authors & Affiliations

Wen Yang and Kai Chang*

  • State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China

Shou-Cheng Zhang

  • Department of Physics, McCullough Building, Stanford University, Stanford, California 94305-4045, USA

  • *Corresponding author. kchang@semi.ac.cn

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Vol. 100, Iss. 5 — 8 February 2008

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