Experimental study of the response time of GaAs as a photoemitter

A. V. Aleksandrov; M. S. Avilov; R. Calabrese; G. Ciullo; N. S. Dikansky; V. Guidi; G. Lamanna; P. Lenisa; P. V. Logachov; A. V. Novokhatsky; L. Tecchio; B. Yang

doi:10.1103/PhysRevE.51.1449

Experimental study of the response time of GaAs as a photoemitter

A. V. Aleksandrov, M. S. Avilov, R. Calabrese, G. Ciullo, N. S. Dikansky, V. Guidi, G. Lamanna, P. Lenisa, P. V. Logachov, A. V. Novokhatsky, L. Tecchio, and B. Yang

Phys. Rev. E 51, 1449 – Published 1 February 1995

Abstract

An experimental investigation was carried out to measure the response time of GaAs in negative electron affinity conditions as a photoemitter. During the experiment, the photocathode was excited by a short-pulse (38 ps rms) frequency-doubled Nd:YLF laser. Results show that the rms response time of GaAs is shorter than 40 ps.

Received 25 August 1994

DOI:https://doi.org/10.1103/PhysRevE.51.1449

Authors & Affiliations

A. V. Aleksandrov, M. S. Avilov, R. Calabrese, G. Ciullo, N. S. Dikansky, V. Guidi, G. Lamanna, P. Lenisa, P. V. Logachov, A. V. Novokhatsky, L. Tecchio, and B. Yang

Budker Institute for Nuclear Physics, Novosibirsk, Russia
Dipartimento di Fisica dell’Università and Istituto Nazionale di Fisica Nucleare, I-44100 Ferrara, Italy
Laboratori Nazionali di Legnaro, I-35020 Legnaro, Italy
Dipartimento di Fisica dell’Università di Bari and Istituto Nazionale di Fisica Nucleare, I-70125 Bari, Italy
Dipartimento di Fisica Sperimentale dell’Università and Istituto Nazionale di Fisica Nucleare, I-10125 Torino, Italy

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Vol. 51, Iss. 2 — February 1995

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