Orientation of hole quantum Hall nematic phases in an out-of-plane electric field

A. F. Croxall, F. Sfigakis, J. Waldie, I. Farrer, and D. A. Ritchie
Phys. Rev. B 99, 195420 – Published 14 May 2019

Abstract

We present observations of an anisotropic resistance state at Landau-level filling factor ν=5/2 in a two-dimensional hole system (2DHS), which occurs for certain values of hole density p and average out-of-plane electric field E. The 2DHS is induced by electric-field effect in an undoped GaAs/AlGaAs quantum well, where front and back gates allow independent tuning of p and E, and hence the symmetry of the confining potential. For p2×1011cm2 and E2×105 V/m, the magnetoresistance along 011¯ greatly exceeds that along 011, suggesting the formation of a quantum Hall nematic or “stripe” phase. Reversing the sign of E rotates the stripes by 90. We suggest this behavior may arise from the mixing of the hole Landau levels and a combination of the Rashba and Dresselhaus spin-orbit coupling effects.

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  • Received 7 March 2019

DOI:https://doi.org/10.1103/PhysRevB.99.195420

©2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

A. F. Croxall1, F. Sfigakis1,2,*, J. Waldie1, I. Farrer1,3, and D. A. Ritchie1,†

  • 1Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
  • 2Institute for Quantum Computing, University of Waterloo, 200 University Avenue West, Waterloo, Ontario, Canada N2L 3G1
  • 3Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom

  • *francois.sfigakis@uwaterloo.ca
  • dar11@cam.ac.uk

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Issue

Vol. 99, Iss. 19 — 15 May 2019

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