Pressure effect on the magnetism of the diluted magnetic semiconductor (Ba1xKx)(Zn1yMny)2As2 with independent spin and charge doping

F. Sun, N. N. Li, B. J. Chen, Y. T. Jia, L. J. Zhang, W. M. Li, G. Q. Zhao, L. Y. Xing, G. Fabbris, Y. G. Wang, Z. Deng, Y. J. Uemura, H. K. Mao, D. Haskel, W. G. Yang, and C. Q. Jin
Phys. Rev. B 93, 224403 – Published 3 June 2016
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Abstract

We used x-ray magnetic circular dichroism (XMCD) to probe the ferromagnetic properties of As p-symmetric (4p) states in the recently synthesized diluted magnetic semiconductor (Ba1xKx)(Zn1yMny)2As2 system under ambient- and high-pressure conditions. The As K-edge XMCD signal scales with the sample magnetization (dominated by Mn) and scales with the ferromagnetic ordering temperature Tc, and hence it is representative of the bulk magnetization. The XMCD intensity gradually decreases upon compression and vanishes at around 25 GPa, indicating quenching of ferromagnetism at this pressure. Transport measurements show a concomitant increase in conductivity with pressure, leading to a nearly metallic state at about the same pressure where magnetic order collapses. High-pressure x-ray diffraction shows an absence of structural transitions to 40 GPa. The results indicate that the mobility of doped holes, probed by both transport and x-ray absorption spectroscopy (4p band broadening), is intimately connected with the mechanism of magnetic ordering in this class of compounds and that its control using external pressure provides an alternative route for tuning the magnetic properties in diluted magnetic semiconductor materials.

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  • Received 18 March 2016
  • Revised 11 May 2016

DOI:https://doi.org/10.1103/PhysRevB.93.224403

©2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

F. Sun1,2,3, N. N. Li2, B. J. Chen1, Y. T. Jia1, L. J. Zhang2, W. M. Li1, G. Q. Zhao1, L. Y. Xing1, G. Fabbris3,4, Y. G. Wang5, Z. Deng1, Y. J. Uemura6, H. K. Mao2,5, D. Haskel3,*, W. G. Yang2,5,*, and C. Q. Jin1,7,*

  • 1Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 2Center for High Pressure Science & Technology Advanced Research (HPSTAR), Shanghai, 201203, China
  • 3Advanced Photon Source (APS), Argonne National Laboratory, Argonne, Illinois 60439, USA
  • 4Department of Physics, Washington University, St. Louis, Missouri 63130, USA
  • 5High Pressure Synergetic Consortium (HPSynC), Geophysical Laboratory, Carnegie Institution of Washington, Argonne, Illinois 60439, USA
  • 6Department of Physics, Columbia University, New York, New York 10027, USA
  • 7Collaborative Innovation Center of Quantum Matter, Beijing 100871, China

  • *Corresponding authors: haskel@aps.anl.gov; yangwg@hpstar.ac.cn; jin@iphy.ac.cn

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Issue

Vol. 93, Iss. 22 — 1 June 2016

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