Dimensional crossover of transport characteristics in topological insulator nanofilms

Koji Kobayashi, Yukinori Yoshimura, Ken-Ichiro Imura, and Tomi Ohtsuki
Phys. Rev. B 92, 235407 – Published 3 December 2015

Abstract

We show how the two-dimensional (2D) topological insulator evolves, by stacking, into a strong or weak topological insulator with different topological indices, proposing a new conjecture that goes beyond an intuitive picture of the crossover from quantum spin Hall to weak topological insulator. Studying the conductance under different boundary conditions, we demonstrate the existence of two conduction regimes in which conduction happens through either surface or edge conduction channels. We show that the two conduction regimes are complementary and exclusive. Conductance maps in the presence and absence of disorder are introduced, together with 2D Z2-index maps, describing the dimensional crossover of the conductance from the 2D to the 3D limit. Stacking layers is an effective way to invert the gap, an alternative to controlling the strength of spin-orbit coupling. The emerging quantum spin Hall insulator phase is not restricted to the case of odd numbers of layers.

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  • Received 12 September 2014
  • Revised 3 September 2015

DOI:https://doi.org/10.1103/PhysRevB.92.235407

©2015 American Physical Society

Authors & Affiliations

Koji Kobayashi1, Yukinori Yoshimura2, Ken-Ichiro Imura2,3, and Tomi Ohtsuki1

  • 1Department of Physics, Sophia University, Tokyo, Chiyoda-ku 102-8554, Japan
  • 2Department of Quantum Matter, AdSM, Hiroshima University, Higashi-Hiroshima 739-8530, Japan
  • 3Kavli Institute for Theoretical Physics, University of California, Santa Barbara, Santa Barbara, California 93106, USA

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Issue

Vol. 92, Iss. 23 — 15 December 2015

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