Spin-flip Raman scattering of the resident electron in singly charged (In,Ga)As/GaAs quantum dot ensembles

J. Debus, V. F. Sapega, D. Dunker, D. R. Yakovlev, D. Reuter, A. D. Wieck, and M. Bayer
Phys. Rev. B 90, 235404 – Published 1 December 2014

Abstract

Highly efficient spin-flip Raman scattering of the resident electron spin is found in singly charged (In,Ga)As/GaAs quantum dots. The applied magnetic field induces a symmetry reduction for the negatively charged exciton, which serves as intermediate scattering state, thus making the spin-flip Raman scattering of the resident electron allowed. Electron-electron exchange interaction mediates the electron spin-flip. Above a threshold magnetic field that depends on the dot size and experiment geometry, the efficiency of the scattering cross section is spectrally shifted with increasing field. This shift, which follows the electron cyclotron energy, is assigned to a hybridization of s-shell singlet and p-shell triplet states of the negatively charged exciton.

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  • Received 22 September 2014
  • Revised 10 November 2014

DOI:https://doi.org/10.1103/PhysRevB.90.235404

©2014 American Physical Society

Authors & Affiliations

J. Debus1,*, V. F. Sapega2,3, D. Dunker1, D. R. Yakovlev1,2, D. Reuter4, A. D. Wieck5, and M. Bayer1,2

  • 1Experimentelle Physik 2, Technische Universität Dortmund, 44227 Dortmund, Germany
  • 2Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia
  • 3Spin Optics Laboratory, St. Petersburg State University, 198504 St. Petersburg, Russia
  • 4Department Physik, Universität Paderborn, 33098 Paderborn, Germany
  • 5Angewandte Festkörperphysik, Ruhr-Universität Bochum, 44780 Bochum, Germany

  • *Corresponding author: joerg.debus@tu-dortmund.de

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Vol. 90, Iss. 23 — 15 December 2014

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