Suppression of low-frequency noise in two-dimensional electron gas at degenerately doped Si:P $\ensuremath{\delta}$ layers

Suppression of low-frequency noise in two-dimensional electron gas at degenerately doped Si:P $δ$ layers

Saquib Shamim, Suddhasatta Mahapatra, Craig Polley, Michelle Y. Simmons, and Arindam Ghosh

Phys. Rev. B 83, 233304 – Published 27 June 2011

Abstract

We report low-frequency $1 / f$ -noise measurements of degenerately doped Si:P $δ$ layers at $4.2$ K. The noise was found to be over six orders of magnitude lower than that of bulk Si:P systems in the metallic regime and is one of the lowest values reported for doped semiconductors. The noise was nearly independent of magnetic field at low fields, indicating negligible contribution from universal conductance fluctuations. Instead, the interaction of electrons with very few active structural two-level systems may explain the observed noise magnitude.

Received 6 February 2011

DOI:https://doi.org/10.1103/PhysRevB.83.233304

Authors & Affiliations

Saquib Shamim^1,*, Suddhasatta Mahapatra², Craig Polley², Michelle Y. Simmons², and Arindam Ghosh¹

¹Department of Physics, Indian Institute of Science, Bangalore 560 012, India
²Center for Quantum Computer Technology, University of New South Wales, Sydney NSW 2052, Australia

^*saquib@physics.iisc.ernet.in

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Vol. 83, Iss. 23 — 15 June 2011

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Physical Review B

covering condensed matter and materials physics

Suppression of low-frequency noise in two-dimensional electron gas at degenerately doped Si:P $δ$ layers

Saquib Shamim, Suddhasatta Mahapatra, Craig Polley, Michelle Y. Simmons, and Arindam Ghosh

Phys. Rev. B 83, 233304 – Published 27 June 2011

Abstract

Authors & Affiliations

Article Text (Subscription Required)

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Physical Review B

covering condensed matter and materials physics

Suppression of low-frequency noise in two-dimensional electron gas at degenerately doped Si:P δ layers

Saquib Shamim, Suddhasatta Mahapatra, Craig Polley, Michelle Y. Simmons, and Arindam Ghosh

Phys. Rev. B 83, 233304 – Published 27 June 2011

Abstract

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Suppression of low-frequency noise in two-dimensional electron gas at degenerately doped Si:P $δ$ layers