Superfluid density near the critical temperature in the presence of random planar defects

D. Dalidovich, A. J. Berlinsky, and C. Kallin
Phys. Rev. B 78, 214508 – Published 8 December 2008

Abstract

The superfluid density near the superconducting transition is investigated in the presence of spatial inhomogeneity in the critical temperature. Disorder is accounted for by means of a random Tc term in the conventional Ginzburg-Landau action for the superconducting order parameter. Focusing on the case where a low density of randomly distributed planar defects is responsible for the variation in Tc, we derive the lowest-order correction to the superfluid density in powers of the defect concentration. The correction is calculated assuming a broad Gaussian distribution for the strengths of the defect potentials. Our results are in a qualitative agreement with the superfluid density measurements in the underdoped regime of high-quality YBCO crystals by Broun and co-workers.

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  • Received 7 August 2008

DOI:https://doi.org/10.1103/PhysRevB.78.214508

©2008 American Physical Society

Authors & Affiliations

D. Dalidovich, A. J. Berlinsky, and C. Kallin

  • Department of Physics and Astronomy, McMaster University, Hamilton, Ontario, Canada L8S 4M1

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Issue

Vol. 78, Iss. 21 — 1 December 2008

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