Simple model for the polarization effects in tip-enhanced Raman spectroscopy

Razvigor Ossikovski, Quang Nguyen, and Gennaro Picardi
Phys. Rev. B 75, 045412 – Published 10 January 2007

Abstract

The paper addresses the polarization properties of tip enhanced Raman spectroscopy (TERS) through an experimental study on (001)- and (111)-oriented crystalline Si samples and quantitatively describes them by using a simple phenomenological model. The model, conceptually similar to that used in surface-enhanced Raman scattering (SERS), is based on the introduction of a phenomenological tip-amplification tensor accounting for the interaction of the tip with the electromagnetic field. It was found to be in a good agreement not only with our experimental data but also with the measurements and numerical simulations of other groups.

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  • Received 22 September 2006

DOI:https://doi.org/10.1103/PhysRevB.75.045412

©2007 American Physical Society

Authors & Affiliations

Razvigor Ossikovski*, Quang Nguyen, and Gennaro Picardi

  • LPICM, Ecole Polytechnique, CNRS, 91128 Palaiseau, France

  • *Corresponding author. Email address: razvigor.ossikovski@polytechnique.edu

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Issue

Vol. 75, Iss. 4 — 15 January 2007

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