Oxygen-vacancy-related dielectric anomaly in $\mathrm{Ca}{\mathrm{Cu}}_{3}{\mathrm{Ti}}_{4}{\mathrm{O}}_{12}$: Post-sintering annealing studies

Oxygen-vacancy-related dielectric anomaly in $Ca {Cu}_{3} {Ti}_{4} O_{12}$ : Post-sintering annealing studies

C. C. Wang and L. W. Zhang

Phys. Rev. B 74, 024106 – Published 14 July 2006

Abstract

The influence of post-sintering annealing on the dielectric properties of $Ca {Cu}_{3} {Ti}_{4} O_{12}$ was investigated in the temperature range form $200 to 400 K$ . A dielectric peak featuring thermally activated Debye-like behavior was observed around $340 K$ $(100 Hz)$ . This peak can be eliminated by annealing in oxidizing atmosphere and created by annealing in reducing atmosphere. The dielectric peak was explained in terms of the combinational contributions from the $n$ - and $p$ -type carriers.