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Electronic inhomogeneity of heavily overdoped Bi2xPbxSr2CuOy studied by low-temperature scanning tunneling microscopy/spectroscopy

H. Mashima, N. Fukuo, Y. Matsumoto, G. Kinoda, T. Kondo, H. Ikuta, T. Hitosugi, and T. Hasegawa
Phys. Rev. B 73, 060502(R) – Published 13 February 2006

Abstract

Low-temperature scanning tunneling microscopy and/or scanning tunneling spectroscopy measurements of heavily overdoped Bi2xPbxSr2CuOy have revealed nanoscale electronic inhomogeneity composed of spatial regions showing superconducting and pseudogaplike gap structures. This proves that the inhomogeneity is a general feature of Bi-based cuprates, regardless of the number of CuO2 planes. The magnitude of inhomogeneity, defined as relative standard deviation of the local gap value, is close to that of slightly overdoped Bi2Sr2CaCu2Oy, suggesting that the electronic inhomogeneity arises from excess oxygen atoms in the (BiO)2 layers.

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  • Received 29 September 2005

DOI:https://doi.org/10.1103/PhysRevB.73.060502

©2006 American Physical Society

Authors & Affiliations

H. Mashima, N. Fukuo, and Y. Matsumoto

  • Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsutacho, Midori-ku, Yokohama 226-8503, Japan

G. Kinoda

  • Kanagawa Academy of Science and Technology, 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012, Japan

T. Kondo and H. Ikuta

  • Department of Crystalline Materials Science, Nagoya University, Furocho, Chikusa-ku, Nagoya 464-8603, Japan

T. Hitosugi and T. Hasegawa

  • Department of Chemistry, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan

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Issue

Vol. 73, Iss. 6 — 1 February 2006

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