Quantum size effects in the surface energy of PbSi(111) film nanostructures studied by surface x-ray diffraction and model calculations

P. Czoschke, Hawoong Hong, L. Basile, and T.-C. Chiang
Phys. Rev. B 72, 075402 – Published 1 August 2005

Abstract

We have used surface x-ray diffraction from a synchrotron source, along with models based upon a free-electron gas confined to a quantum well, to study quantum size effects in the surface energy of ultrathin Pb films grown on pretreated Si(111) substrates. Films grown at 110K are smooth, but as they are annealed to near room temperature, their morphology is observed evolving through various metastable states and eventually to a roughened state in local equilibrium. Strong variations in the stability of different island heights are observed, consistent with quasibilayer oscillations in the surface energy found from the theoretical free-electron calculations. By analyzing the quasiequilibrium distribution of thicknesses, empirical information on the film surface energy is obtained for a wide range of thicknesses. The morphological annealing behavior of the films is also found to be explained by the deduced surface energy.

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  • Received 18 April 2005

DOI:https://doi.org/10.1103/PhysRevB.72.075402

©2005 American Physical Society

Authors & Affiliations

P. Czoschke1,2, Hawoong Hong2, L. Basile1,2, and T.-C. Chiang1,2,*

  • 1Department of Physics, University of Illinois at Urbana-Champaign, 1110 W. Green Street, Urbana, Illinois 61801-3080, USA
  • 2Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 S. Goodwin Avenue, Urbana, Illinois 61801-2902, USA

  • *Electronic address: chiang@mrl.uiuc.edu

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Vol. 72, Iss. 7 — 15 August 2005

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