Abstract
Donor electron spins in phosphorus-doped silicon (Si:P) are a candidate two-level system (qubit) for quantum information processing. Spin echo measurements of isotopically purified are presented that show exceptionally long transverse relaxation (decoherence) times, at low temperature. Below the spin decoherence is shown to be controlled by instantaneous diffusion and at higher temperatures by an Orbach process. for small pulse turning angles is 14 ms at 7 K and extrapolates to for an isolated spin, over 2 orders of magnitude longer than previously demonstrated.
- Received 6 August 2003
DOI:https://doi.org/10.1103/PhysRevB.68.193207
©2003 American Physical Society