Electronic and crystal structure of fully strained LaNiO3 films

A. Yu. Dobin, K. R. Nikolaev, I. N. Krivorotov, R. M. Wentzcovitch, E. Dan Dahlberg, and A. M. Goldman
Phys. Rev. B 68, 113408 – Published 19 September 2003
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Abstract

First-principles band structure calculations have been used to investigate epitaxially strained LaNiO3 films. Experimentally, tensile biaxial strain has been realized in pseudomorphic LaNiO3 films grown on SrTiO3 (001) substrates using ozone-assisted molecular beam epitaxy. Measured and calculated out-of-plane lattice parameters are in excellent agreement. This demonstrates the viability of the computational method as well as the high quality of the films.

  • Received 12 February 2003

DOI:https://doi.org/10.1103/PhysRevB.68.113408

©2003 American Physical Society

Authors & Affiliations

A. Yu. Dobin1,2,3, K. R. Nikolaev1, I. N. Krivorotov1, R. M. Wentzcovitch2,3, E. Dan Dahlberg1, and A. M. Goldman1

  • 1School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455, USA
  • 2Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, USA
  • 3Supercomputing Institute for Digital Simulation and Advanced Computation, University of Minnesota, Minneapolis, Minnesota 55455, USA

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Vol. 68, Iss. 11 — 15 September 2003

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