Crystal-field study in rare-earth-doped semiconducting YBiPt

P. G. Pagliuso, C. Rettori, M. E. Torelli, G. B. Martins, Z. Fisk, J. L. Sarrao, M. F. Hundley, and S. B. Oseroff
Phys. Rev. B 60, 4176 – Published 1 August 1999
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Abstract

Electron spin resonance (ESR) and magnetic-susceptibility experiments in the rare-earth-doped (R=Nd, Er, and Yb) cubic semiconducting YBiPt allow estimates of the fourth (A4) and sixth (A6) order crystal-field parameters for this compound. It is found that these parameters are of the same order for all the R studied. On the other hand, no crystal-field effects were found for the Gd3+ doped single-crystal system. Consistent with the small gap semiconducting character of the YBiPt intermetallic compound, a Dysonian ESR line shape with no g shift and Korringa broadening was observed.

  • Received 18 December 1998

DOI:https://doi.org/10.1103/PhysRevB.60.4176

©1999 American Physical Society

Authors & Affiliations

P. G. Pagliuso and C. Rettori

  • Instituto de Física “Gleb Wataghin,” UNICAMP, 13083-970, Campinas-SP, Brazil

M. E. Torelli, G. B. Martins, and Z. Fisk

  • NHMFL, Florida State University, Tallahassee, Florida 32306

J. L. Sarrao and M. F. Hundley

  • Los Alamos National Laboratories, Los Alamos, New Mexico 87545

S. B. Oseroff

  • San Diego State University, San Diego, California 92182

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Vol. 60, Iss. 6 — 1 August 1999

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