Transient-conductivity change induced by laser-pulsed excitation in semimetal films

J. C. G. de Sande, M. Sánchez Balmaseda, and J. M. Guerra Pérez
Phys. Rev. B 50, 1861 – Published 15 July 1994
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Abstract

An observation of photoconductivity in a homonuclear semimetal (bismuth) is reported. The effect is observed when bismuth films of different thicknesses are irradiated with 1.064-μm laser pulses. The sign and the temporal evolution of the resistivity change induced in the films are studied. An anomalous resistivity change due to laser heating is observed in the thickest film. A theoretical interpretation that explains and fits the experimental behavior well is given. The results support the predictions of a previously reported model that required the pumping of carriers into a metastable band by the laser light. The sum of the mobilities and of the diffusion coefficients for electrons and holes in this band are also estimated.

  • Received 25 February 1994

DOI:https://doi.org/10.1103/PhysRevB.50.1861

©1994 American Physical Society

Authors & Affiliations

J. C. G. de Sande

  • Departamento de Optica, Faculdad de Ciencias Físicas, Universidad Complutense, 28040 Madrid, Spain

M. Sánchez Balmaseda

  • Departamento de Física Aplicada III (Electricidad y Electrónica), Faculdad de Ciencias Físicas, Universidad Complutense, 28040 Madrid, Spain

J. M. Guerra Pérez

  • Departamento de Optica, Faculdad de Ciencias Físicas, Universidad Complutense, 28040 Madrid, Spain

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Vol. 50, Iss. 3 — 15 July 1994

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