We have investigated the charge transfer due to the change of magnetic flux in samples with a circular gate which allowed us to create an inhomogeneous electron density distribution. It has been shown that at a negative gate voltage, when the filling factors in gated and ungated regions of a sample are close to integers, nonequilibrium accumulation of charge can take place in the gated region. This gives rise to charge transfer through the sample corresponding to Hall conductivity of the ungated region with the larger number of occupied Landau levels.

• Received 19 February 1993

DOI:https://doi.org/10.1103/PhysRevB.48.8480