Hyperfine interactions of Cd111 in Ga2O3

A. F. Pasquevich, M. Uhrmacher, L. Ziegeler, and K. P. Lieb
Phys. Rev. B 48, 10052 – Published 1 October 1993
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Abstract

Perturbed-angular-correlation measurements were carried out after implantation of In111 into amorphous and polycrystalline powder samples of α- and β-Ga2O3, and single crystals of β-Ga2O3. After annealing of the radiation damage the quadrupole hyperfine interactions of Cd111 were determined. In both α- and β-crystallne phases, three electric-quadrupole interactions were observed. In addition, the orientations of the electric-field gradients in β-Ga2O3 at the probe sites were determined. In β-Ga2O3 preferential substitutional In occupation of the octahedral sites was found. Two of the quadrupole interactions in α- and β-Ga2O3 are attributed to different charge states of the Cd111 impurity (Cd0) and (Cd). Their populations varied in a reversible way in the temperature range 450–700 K and also can be influenced by the oxygen pressure.

  • Received 26 March 1993

DOI:https://doi.org/10.1103/PhysRevB.48.10052

©1993 American Physical Society

Authors & Affiliations

A. F. Pasquevich

  • Departamento de Fisica, Universidad Nacional de La Plata, c.c. No. 67, 1900 La Plata, Argentina

M. Uhrmacher, L. Ziegeler, and K. P. Lieb

  • II. Physikalisches Institut Universität Göttingen, Bunsenstrasse 7-9, 37073 Göttingen, Germany

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Vol. 48, Iss. 14 — 1 October 1993

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