Molecular-dynamics study of anharmonic effects in silicon

C. Z. Wang, C. T. Chan, and K. M. Ho
Phys. Rev. B 40, 3390 – Published 15 August 1989
PDFExport Citation

Abstract

Molecular-dynamics calculations have been performed to study the temperature-dependent linewidths and frequency shifts of selected phonon modes in Si. The results obtained are in excellent agreement with experimental data. Interatomic forces in the calculations are obtained by an empirical tight-binding model with parameters determined completely by first-principles electronic structure and total-energy calculations.

  • Received 14 April 1989

DOI:https://doi.org/10.1103/PhysRevB.40.3390

©1989 American Physical Society

Authors & Affiliations

C. Z. Wang, C. T. Chan, and K. M. Ho

  • Microelectronics Research Center and Department of Physics, Iowa State University, Ames, Iowa 50011

References (Subscription Required)

Click to Expand
Issue

Vol. 40, Iss. 5 — 15 August 1989

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×