Codeposition of Rb and oxygen on GaAs(110) at 150 K results in the formation of an abrupt interface between the Rb oxide overlayer and the substrate. Subsequent annealing to 500 K leads to oxidation of the substrate by thermally induced oxygen transfer from Rb oxide to GaAs. This behavior indicates a strong contribution of alkali-metal oxides to the alkali-metal-induced enhancement of the oxidation of GaAs(110).

• Received 19 August 1988

DOI:https://doi.org/10.1103/PhysRevB.39.10387