The first report on the electrical transport properties of LiZnAs is presented. LiZnAs, which has an antifluorite structure, is a p-type semiconductor with energy band gap of about 1.1 eV. The intrinsic region is found at temperatures above 450 K. The typical resistivity, Hall mobility, and carrier concentration at room temperature are of the order of ${10}^{\mathrm{-}1}$–10 Ω cm, ≤30 ${\mathrm{cm}}^2$/V sec, and ${10}^{17}$ ${\mathrm{cm}}^{\mathrm{-}3}$, respectively. For some crystals the disordered structure between Li and Zn sites is observed, accompanied by a dip in resistivity around 350 K.

• Received 20 April 1987

DOI:https://doi.org/10.1103/PhysRevB.36.4439