Abstract
Ion-implanted graphite is studied by Raman scattering. Highly oriented pyrolytic graphite is implanted with , , , , , and ions at 100 keV normally incident upon the face. Ion fluences in the range 1 × to 2.5 × ions/ are used. The lattice damage upon implantation is monitored by observation of the disorder-induced Raman line at ∼ 1355 in the first-order spectra and at ∼ 2970 in the second-order spectra. The Raman results indicate that an abrupt transformation to an amorphous surface layer occurs at a critical fluence which varies with the mass of the implanted ion. Results for first- and second-order Raman spectra are also presented for the same ion-implanted samples upon isochronal vacuum annealing at various annealing temperatures, showing a partial restoration of the graphite ordering. The second-order Raman spectra are even more sensitive than the first-order spectra to the creation of lattice damage by ion implantation and to the subsequent partial restoration of lattice order by annealing.
- Received 8 December 1980
DOI:https://doi.org/10.1103/PhysRevB.24.1027
©1981 American Physical Society