Electronic structure of molecular arsenic chalcogenides

W. R. Salaneck, K. S. Liang, A. Paton, and N. O. Lipari
Phys. Rev. B 12, 725 – Published 15 July 1975
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Abstract

The valence bands of As4S4 and As4Se4, were studied by x-ray-photoemission spectroscopy (XPS) and interpreted utilizing a complete-neglect-of-differential-overlap self-consistent-field molecular-orbital(MO) formalism. The upper valence band originates almost entirely from p electrons, and the lower mostly from s electrons. A mixing of nonbonding and bonding p-derived levels occurs, even within the first x-ray-photoemission peak. These results differ from the origins of peaks in XPS spectra proposed for similar materials in the literature. In addition, the self-consistent-field MO computation agrees with the XPS data to a much greater degree than the results of previous MO calculations.

  • Received 23 December 1974

DOI:https://doi.org/10.1103/PhysRevB.12.725

©1975 American Physical Society

Authors & Affiliations

W. R. Salaneck, K. S. Liang, A. Paton, and N. O. Lipari

  • Xerox Webster Research Center, Webster, New York 14580

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Issue

Vol. 12, Iss. 2 — 15 July 1975

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