Here, we analyze, in a noncontact fashion, charge-carrier mobility as a function of injection level and temperature in silicon by time-resolved terahertz spectroscopy (TRTS) and parametrize our data by the classical semiempirical models of Klaassen [Solid State Electron. 35, 953 (1992); Solid State Electron. 35, 961 (1992)] and Dorkel and Leturcq [Solid State Electron. 24, 821 (1981)]. Our experimental results are in very good agreement with the pioneering works of Krausse [Solid State Electron. 15, 1377 (1972)] and Dannhäuser [Solid State Electron. 15, 1371 (1972)], who analyzed these phenomena by employing contact-based methods. This agreement, that validates our methodology, can only be achieved by considering charge-carrier diffusion effects following above band gap near-surface pump photoexcitation of the sample. From our results, obtained over a large range of injection levels, we conclude that the model of Klaassen is the best at describing the collected data at room temperature. Furthermore, we analyze by TRTS the dependence of charge-carrier mobility with temperature for a fixed injection level. Once more, the parametrization made by the classical model of Klaassen describes our data appropriately even without the necessity of applying any fitting parameters (just with the charge-carrier density as an input). In this respect, our work supports the validity of the model and parametrization proposed by Klaassen and illustrates how TRTS can be reliably employed for the quantitative determination of mobility in semiconductors as a function of key parameters such as injection level and temperature.

• Received 22 December 2022
• Revised 2 February 2023
• Accepted 3 February 2023

DOI:https://doi.org/10.1103/PhysRevB.107.085204