Evolution of one-dimensional electronic dynamics in Nb2n+1SinTe4n+2

Zhen Zhu, Peng-Bo Song, Ding-Yun Huang, Hao-Ke Xu, Yi-Sheng Gu, Qiao-Yan Yu, Dang Liu, Sha-Sha Xue, Dan-Dan Guan, Shi-Yong Wang, Yao-Yi Li, Canhua Liu, You-Guo Shi, Xiao Yan Xu, Hao Zheng, and Jin-Feng Jia
Phys. Rev. B 106, 085426 – Published 26 August 2022
PDFHTMLExport Citation

Abstract

The electronic dynamics in Nb2n+1SinTe4n+2 with varying component n are systematically investigated by low-temperature scanning tunneling microscopy/spectroscopy (STM/STS). Our quasiparticle interferences reveal a nondecay standing wave at the Fermi level, proving the one-dimensional (1D) nature of the charge carriers (holes) in the materials. The energy and component dependence of phase relaxation length lϕ and lifetime τ of 1D holes are unveiled and found to be consistent with the Tomonaga-Luttinger liquid theory. Our work demonstrates Nb2n+1SinTe4n+2 as a platform to manipulate 1D physics and offers an alternative perspective for studying electronic dynamics of non-Fermi liquids through STM experiments.

  • Figure
  • Figure
  • Figure
  • Figure
  • Received 4 June 2022
  • Revised 15 August 2022
  • Accepted 17 August 2022

DOI:https://doi.org/10.1103/PhysRevB.106.085426

©2022 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Zhen Zhu1,*, Peng-Bo Song2,3,*, Ding-Yun Huang1,4, Hao-Ke Xu1, Yi-Sheng Gu1, Qiao-Yan Yu1, Dang Liu1, Sha-Sha Xue1, Dan-Dan Guan1, Shi-Yong Wang1, Yao-Yi Li1, Canhua Liu1, You-Guo Shi2,3, Xiao Yan Xu1, Hao Zheng1,†, and Jin-Feng Jia1,‡

  • 1School of Physics and Astronomy, Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai 200240, China
  • 2Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 3Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 4Cavendish Laboratory, Department of Physics, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom

  • *These authors contributed equally to this work.
  • haozheng1@sjtu.edu.cn
  • jfjia@sjtu.edu.cn

Article Text (Subscription Required)

Click to Expand

Supplemental Material (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 106, Iss. 8 — 15 August 2022

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×