High-field magnetization and magnetodielectric effect in a Ni2NbBO6 single crystal

Gaoshang Gong, Dan Su, Young Sun, Longmeng Xu, Jincheng He, and Zhaoming Tian
Phys. Rev. B 105, 054408 – Published 10 February 2022

Abstract

We have studied the magnetization, dielectric permittivity, thermal expansion, and magnetostriction of Ni2NbBO6 single crystals. Different from that of the ab plane, the c axis magnetization approaches zero at low magnetic fields and a spin-flop transition happens around HSF=3.65T. The results indicate that the c axis is the hard axis and the ab plane is the easy plane. The high-field isothermal magnetization measured at T=4.2K reveals that the saturation magnetic field is Hs=17T, above which the magnetic structure changes from canted-antiferromagnetic order to ferromagnetic order with the saturation magnetic moment μeff=2.40 μB/Ni2+ Below antiferromagnetic transition temperature TN, an unusual negative thermal expansion phenomenon is detected along the b axis and it can be interpreted by the magnetic structural variation. Based on the magnetization and the magnetostriction data, the magnetic field–temperature phase diagram of Ni2NbBO6 is constructed. The magnetodielectric effect confirms the existence of magnetoelectric coupling in Ni2NbBO6.

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  • Received 13 September 2021
  • Revised 20 December 2021
  • Accepted 18 January 2022

DOI:https://doi.org/10.1103/PhysRevB.105.054408

©2022 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Gaoshang Gong1,2,3,*, Dan Su2, Young Sun2,4, Longmeng Xu5, Jincheng He2, and Zhaoming Tian5,†

  • 1School of Physics and Electronic Engineering, Zhengzhou University of Light Industry, Zhengzhou 450002, People's Republic of China
  • 2Beijing National Laboratory for Condensed Matter Physics and Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
  • 3Henan Key Laboratory of Magnetoelectronic Information Functional Materials, Zhengzhou University of Light Industry, Zhengzhou 450002, People's Republic of China
  • 4Center of Quantum Materials and Devices, Chongqing University, Chongqing 401331, People's Republic of China
  • 5School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China

  • *gonggaoshang@zzuli.edu.cn
  • tianzhaoming@hust.edu.cn

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Issue

Vol. 105, Iss. 5 — 1 February 2022

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