• Letter

Observation of topological edge states in the quantum spin Hall insulator Ta2Pd3Te5

Xuguang Wang, Daiyu Geng, Dayu Yan, Wenqi Hu, Hexu Zhang, Shaosheng Yue, Zhenyu Sun, Shiv Kumar, Eike F. Schwier, Kenya Shimada, Peng Cheng, Lan Chen, Simin Nie, Zhijun Wang, Youguo Shi, Yi-Qi Zhang, Kehui Wu, and Baojie Feng
Phys. Rev. B 104, L241408 – Published 22 December 2021
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Abstract

Two-dimensional topological insulators (2DTIs), which host the quantum spin Hall (QSH) effect, are one of the key materials in next-generation spintronic devices. To date, experimental evidence of the QSH effect has only been observed in a few materials, and thus, the search for new 2DTIs is at the forefront of physical and materials science. Here, we report experimental evidence of a 2DTI in the van der Waals material Ta2Pd3Te5. First-principles calculations show that each monolayer of Ta2Pd3Te5 is a 2DTI with weak interlayer interactions. Combined transport, angle-resolved photoemission spectroscopy, and scanning tunneling microscopy measurements confirm the existence of a band gap at the Fermi level and topological edge states inside the gap. These results demonstrate that Ta2Pd3Te5 is a promising material for fabricating spintronic devices based on the QSH effect.

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  • Received 15 December 2020
  • Revised 12 August 2021
  • Accepted 6 December 2021

DOI:https://doi.org/10.1103/PhysRevB.104.L241408

©2021 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Xuguang Wang1,4,*, Daiyu Geng1,4,*, Dayu Yan1,4,*, Wenqi Hu1,4,*, Hexu Zhang1,4, Shaosheng Yue1,4, Zhenyu Sun1,4, Shiv Kumar2, Eike F. Schwier2, Kenya Shimada2, Peng Cheng1,4, Lan Chen1,4,6, Simin Nie3, Zhijun Wang1,4, Youguo Shi1,4,5,6,†, Yi-Qi Zhang1,4, Kehui Wu1,4,6,‡, and Baojie Feng1,4,§

  • 1Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 2Hiroshima Synchrotron Radiation Center, Hiroshima University, 2-313 Kagamiyama, Higashi-Hiroshima 739-0046, Japan
  • 3Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA
  • 4School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
  • 5Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 6Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China

  • *These authors contributed equally to this work.
  • ygshi@iphy.ac.cn
  • khwu@iphy.ac.cn
  • §bjfeng@iphy.ac.cn

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Issue

Vol. 104, Iss. 24 — 15 December 2021

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