Structure and phase transition of a uniaxially incommensurate In monolayer on Si(111)

Shigemi Terakawa, Shinichiro Hatta, Hiroshi Okuyama, and Tetsuya Aruga
Phys. Rev. B 100, 115428 – Published 16 September 2019

Abstract

We have studied the atomic structure and phase transition of a dense metallic monolayer of In on Si(111). Although the monolayer phase was previously considered to have a (7×3) periodicity, low-energy electron diffraction and scanning tunneling microscopy observations have revealed that the phase has an incommensurate structure with the In overlayer uniaxially contracted by 2% from (7×3). The uniaxially contracted structure was found to be more stable than the commensurate (7×3) structure by first-principles calculations. We also observed a phase transition to a (7×7) phase at 250–210 K upon cooling. Angle-resolved photoelectron spectroscopy and macroscopic four-point-probe conductivity measurements demonstrated that the transition induces the disappearance of metallic surface states and a sharp drop in sheet conductivity, respectively. These results indicate an electronic metal-insulator transition.

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  • Received 29 May 2019
  • Revised 28 August 2019

DOI:https://doi.org/10.1103/PhysRevB.100.115428

©2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Shigemi Terakawa, Shinichiro Hatta, Hiroshi Okuyama, and Tetsuya Aruga*

  • Department of Chemistry, Graduate School of Science, Kyoto University, Kyoto 606-8502, Japan

  • *aruga@kuchem.kyoto-u.ac.jp

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Issue

Vol. 100, Iss. 11 — 15 September 2019

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