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Role of Oxygen Defects in Conductive-Filament Formation in Y2O3-Based Analog RRAM Devices as Revealed by Fluctuation Spectroscopy

Eszter Piros, Martin Lonsky, Stefan Petzold, Alexander Zintler, S.U. Sharath, Tobias Vogel, Nico Kaiser, Robert Eilhardt, Leopoldo Molina-Luna, Christian Wenger, Jens Müller, and Lambert Alff
Phys. Rev. Applied 14, 034029 – Published 11 September 2020
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Abstract

Low-frequency noise in Y2O3-based resistive random-access memory devices with analog switching is studied at intermediate resistive states and as a function of dc cycling. A universal 1/fα-type behavior is found, with a frequency exponent of α1.2 that is independent of the applied reset voltage or the device resistance and is attributed to the intrinsic abundance of oxygen vacancies unique to the structure of yttria. Remarkably, the noise magnitude in the high resistive state systematically decreases through dc training. This effect is attributed to the stabilization of the conductive filament via the consumption of oxygen vacancies, thus reducing the number of active fluctuators in the vicinity of the filament.

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  • Received 30 January 2020
  • Revised 5 February 2020
  • Accepted 8 May 2020

DOI:https://doi.org/10.1103/PhysRevApplied.14.034029

Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

Published by the American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Eszter Piros1,*, Martin Lonsky2, Stefan Petzold1, Alexander Zintler3, S.U. Sharath1, Tobias Vogel1, Nico Kaiser1, Robert Eilhardt3, Leopoldo Molina-Luna3, Christian Wenger4,5, Jens Müller2, and Lambert Alff1

  • 1Advanced Thin Film Technology Division, Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Strasse 2, 64287 Darmstadt, Germany
  • 2Institute of Physics, Goethe-University Frankfurt, Max-von-Laue-Strasse 1, 60438 Frankfurt am Main, Germany
  • 3Advanced Electron Microscopy Division, Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Strasse 2, 64287 Darmstadt, Germany
  • 4IHP-Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
  • 5Brandenburg Medical School Theodor Fontane, Fehrbelliner Strasse 38, 16816 Neuruppin, Germany

  • *piros@oxide.tu-darmstadt.de

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Vol. 14, Iss. 3 — September 2020

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