Polarization tunable bidirectional photoresponse in Van der Waals αIn2Se3/NbX2 (X=S,Se,andTe) ferroelectric diodes

Shibo Fang, Qiuhui Li, Chen Yang, Baochun Wu, Shiqi Liu, Jie Yang, Jiachen Ma, Zongmeng Yang, Kechao Tang, and Jing Lu
Phys. Rev. Materials 7, 084412 – Published 28 August 2023
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Abstract

Ferroelectric diodes can generate a polarization-controlled bidirectional photoresponse to simulate inhibition and promotion behaviors in the artificial neuromorphic system with fast speed, high energy efficiency, and nonvolatility. However, the existing ferroelectric diodes based on ferroelectric oxides suffer from a weak bidirectional photoresponse (below 1 mA/W), difficult miniaturization, and a large response photon energy (over 3 eV). Here, we design a series of van der Waals αIn2Se3/NbX2 (X = S, Se, and Te) ferroelectric diodes with bidirectional photoresponse by using ab initio quantum transport simulation. These devices show a maximum bidirectional photoresponse of 30 (−19) mA/W and a minimum response photon energy of 1.3 eV at the monolayer thickness. Our work shows advanced optoelectronic applications of the van der Waals ferroelectric diodes in the future artificial neuromorphic system.

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  • Received 10 May 2023
  • Revised 28 July 2023
  • Accepted 7 August 2023

DOI:https://doi.org/10.1103/PhysRevMaterials.7.084412

©2023 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Shibo Fang1,*, Qiuhui Li1,*, Chen Yang1,†, Baochun Wu1,2, Shiqi Liu1,3, Jie Yang4, Jiachen Ma1,5, Zongmeng Yang1, Kechao Tang6, and Jing Lu1,7,8,9,10,‡

  • 1State Key Laboratory for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, People's Republic of China
  • 2State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100871, People's Republic China
  • 3Key Laboratory of Spintronics Materials, Devices and Systems of Zhejiang Province, Hangzhou 311305, People's Republic of China
  • 4Key Laboratory of Material Physics, School of Physics and Microelectronics, Ministry of Education, Zhengzhou University, Zhengzhou 450001, People's Republic of China
  • 5Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126 Chemnitz, Germany
  • 6School of Integrated Circuits, Peking University, Beijing 100871, People's Republic of China
  • 7Collaborative Innovation Center of Quantum Matter, Beijing 100871, People's Republic of China
  • 8Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MEMD), Peking University, Beijing 100871, People's Republic of China
  • 9Peking University Yangtze Delta Institute of Optoelectronics, Nantong 226010, People's Republic of China
  • 10Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871, People's Republic of China

  • *These authors contributed equally to this work.
  • Corresponding author: yangchen96@pku.edu.cn
  • Corresponding author: jinglu@pku.edu.cn

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Issue

Vol. 7, Iss. 8 — August 2023

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