To overcome the limitations of thermodynamic defect models, we introduce a multilevel kinetic approach to simulate the activation of $p$ doping in CdTe by group V elements using arsenic as a “model” dopant. On the lowest level, we calculate thermodynamic and kinetic parameters of point defects, complexes, and reactions from first principles. On the intermediate level, we use these parameters to calculate the kinetic rates of defect reactions. Finally, we simulate the time evolution of defects and free carriers. Our results show the importance of kinetic factors in defect chemistry models. We reveal the primary arsenic activation pathway to be a fast reaction in which the tellurium atoms get kicked out and replaced on the regular anion sites by interstitial arsenic species. We discover the important role of ($\mathrm{A}{\mathrm{s}}_{\mathrm{i}}\mathrm{A}{\mathrm{s}}_{\mathrm{Te}}$) and ($\mathrm{A}{\mathrm{s}}_{\mathrm{i}}\mathrm{A}{\mathrm{s}}_{\mathrm{i}}$) complexes that arise during activation anneal to form kinetically stabilized transient states that not only compensate the doping but also can produce deep recombination levels. We expect that our modeling approach and the gained insight into the atomic processes behind the doping formation will advance the defect chemistry modeling of electronic properties of materials.

• Received 11 June 2018
• Revised 20 August 2018

DOI:https://doi.org/10.1103/PhysRevMaterials.2.103803