Nonlinear Optical Spectroscopy of Suboxides at Oxidized Si(111) Interfaces

S. Bergfeld, B. Braunschweig, and W. Daum
Phys. Rev. Lett. 93, 097402 – Published 24 August 2004

Abstract

Native oxidation of the Si(111)(1×1)H surface causes the appearance and disappearance of second-harmonic generation (SHG) resonances related to specific bonding configurations of Si atoms at the interface. Resonances at 3.52 eV two-photon energy observed in p-polarized SHG spectra are indicative of a Si suboxide configuration present in a partially oxidized Si surface bilayer. Similar resonances are observed in spectra of thermally oxidized Si(111) and point to Si2+ suboxide states at the buried interface.

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  • Received 5 September 2003

DOI:https://doi.org/10.1103/PhysRevLett.93.097402

©2004 American Physical Society

Authors & Affiliations

S. Bergfeld*, B. Braunschweig, and W. Daum

  • Institut für Schichten und Grenzflächen (ISG 3), Forschungszentrum Jülich, D-52428 Jülich, Germany and Institut für Physik und Physikalische Technologien, TU Clausthal, Leibnizstrasse 4, D-38678 Clausthal-Zellerfeld, Germany

  • *Also at JET Lasersysteme GmbH, D-41836 Hückelhoven, Germany.
  • Corresponding author Electronic address: winfried.daum@tu-clausthal.de

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Issue

Vol. 93, Iss. 9 — 27 August 2004

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