Observation of a Quantized Hall Resistivity in the Presence of Mesoscopic Fluctuations

E. Peled, D. Shahar, Y. Chen, D. L. Sivco, and A. Y. Cho
Phys. Rev. Lett. 90, 246802 – Published 18 June 2003

Abstract

We present an experimental study of mesoscopic, two-dimensional electronic systems at high magnetic fields. Our samples, prepared from a low-mobility InGaAs/InAlAs wafer, exhibit reproducible, sample specific, resistance fluctuations. Focusing on the lowest Landau level, we find that, while the diagonal resistivity displays strong fluctuations, the Hall resistivity is free of fluctuations and remains quantized at its ν=1 value, h/e2. This is true also in the insulating phase that terminates the quantum Hall series. These results extend the validity of the semicircle law of conductivity in the quantum Hall effect to the mesoscopic regime.

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  • Received 17 May 2002

DOI:https://doi.org/10.1103/PhysRevLett.90.246802

©2003 American Physical Society

Authors & Affiliations

E. Peled and D. Shahar

  • Department of Condensed Matter Physics, Weizmann Institute, Rehovot 76100, Israel

Y. Chen

  • Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA

D. L. Sivco and A. Y. Cho

  • Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974, USA

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Vol. 90, Iss. 24 — 20 June 2003

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