Edge Dislocations in Crystal Structures Considered as Traveling Waves in Discrete Models

A. Carpio and L. L. Bonilla
Phys. Rev. Lett. 90, 135502 – Published 1 April 2003; Erratum Phys. Rev. Lett. 91, 029901 (2003)

Abstract

The static stress needed to depin a 2D edge dislocation, the lower dynamic stress needed to keep it moving, its velocity, and displacement vector profile are calculated from first principles. We use a simplified discrete model whose far field distortion tensor decays algebraically with distance as in the usual elasticity. Dislocation depinning in the strongly overdamped case (including the effect of fluctuations) is analytically described. N parallel edge dislocations whose average interdislocation distance divided by the Burgers vector of a single dislocation is L1 can depin a given one if N=O(L). Then a limiting dislocation density can be defined and calculated in simple cases.

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  • Received 21 May 2002

DOI:https://doi.org/10.1103/PhysRevLett.90.135502

©2003 American Physical Society

Erratum

Authors & Affiliations

A. Carpio

  • Departamento de Matemática Aplicada, Universidad Complutense de Madrid, 28040 Madrid, Spain

L. L. Bonilla

  • Departamento de Matemáticas, Escuela Politécnica Superior, Universidad Carlos III de Madrid, Avenida de la Universidad 30, 28911 Leganés, Spain

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Issue

Vol. 90, Iss. 13 — 4 April 2003

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