Partial Crystallization of an Amorphous Alloy by Electronic Energy Deposition

A. Dunlop, G. Jaskierowicz, G. Rizza, and M. Kopcewicz
Phys. Rev. Lett. 90, 015503 – Published 9 January 2003

Abstract

The first experimental evidence is reported of crystallization induced in an amorphous alloy by a high density of electronic excitation deposited along the path of swift heavy ions. The formation of nanocrystalline iron boride phases was observed in an amorphous Fe73.5Cu1Nb3Si13.5B9 alloy irradiated at low temperature with 5 GeV Pb ions up to fluences of 1×1011ionscm2. No evidence for the formation of the Fe(Si) phase was found. This phenomenon was interpreted in terms of the relaxation of the high level of energy deposited in electronic excitations along the path of Pb ions in the target, which induces extensive stress and strain that could destabilize the amorphous structure.

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  • Received 13 August 2002

DOI:https://doi.org/10.1103/PhysRevLett.90.015503

©2003 American Physical Society

Authors & Affiliations

A. Dunlop*, G. Jaskierowicz, and G. Rizza

  • Laboratoire des Solides Irradiés, Commissariat à l’Energie Atomique/Ecole Polytechnique, 91128 Palaiseau, France

M. Kopcewicz

  • Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warszawa, Poland

  • *Electronic address: annie.dunlop@polytechnique.fr

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Vol. 90, Iss. 1 — 10 January 2003

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