Nanometer-Scale Resolution of Strain and Interdiffusion in Self-Assembled <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mi>InAs</mi><mi>/</mi><mi>GaAs</mi></math></span> Quantum Dots

I. Kegel; T. H. Metzger; A. Lorke; J. Peisl; J. Stangl; G. Bauer; J. M. García; P. M. Petroff

doi:10.1103/PhysRevLett.85.1694

Nanometer-Scale Resolution of Strain and Interdiffusion in Self-Assembled $InAs / GaAs$ Quantum Dots

I. Kegel, T. H. Metzger, A. Lorke, J. Peisl, J. Stangl, G. Bauer, J. M. García, and P. M. Petroff

Phys. Rev. Lett. 85, 1694 – Published 21 August 2000

Abstract

Tomographic nanometer-scale images of self-assembled InAs/GaAs quantum dots have been obtained from surface-sensitive x-ray diffraction. Based on the three-dimensional intensity mapping of selected regions in reciprocal space, the method yields the shape of the dots along with the lattice parameter distribution and the vertical interdiffusion profile on a subnanometer scale. The material composition is found to vary continuously from GaAs at the base of the dot to InAs at the top.