Dynamics of Ripening of Self-Assembled II-VI Semiconductor Quantum Dots

S. Lee, I. Daruka, C. S. Kim, A.-L. Barabási, J. L. Merz, and J. K. Furdyna
Phys. Rev. Lett. 81, 3479 – Published 19 October 1998
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Abstract

We report the systematic investigation of ripening of CdSe self-assembled quantum dots (QDs) on ZnSe. We investigate the size and density of the QDs as a function of time after deposition of CdSe has stopped. The dynamics of the ripening process is interpreted in terms of the theory of Ostwald ripening. Furthermore, the experimental results allow us to identify the growth mode of the QD formation process.

  • Received 29 January 1998

DOI:https://doi.org/10.1103/PhysRevLett.81.3479

©1998 American Physical Society

Authors & Affiliations

S. Lee1, I. Daruka1, C. S. Kim1, A.-L. Barabási1,*, J. L. Merz2, and J. K. Furdyna1,†

  • 1Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556
  • 2Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556

  • *Email address: alb@nd.edu
  • Email address: furdyna.1@nd.edu

Comments & Replies

Comment on “Dynamics of Ripening of Self-Assembled II-VI Semiconductor Quantum Dots”

P. R. Kratzert, M. Rabe, and F. Henneberger
Phys. Rev. Lett. 83, 239 (1999)

Lee et al. Reply:

S. Lee, I. Daruka, C. S. Kim, A.-L. Barabási, J. K. Furdyna, and J. L. Merz
Phys. Rev. Lett. 83, 240 (1999)

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Vol. 81, Iss. 16 — 19 October 1998

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