Temperature-Independent Photoconductivity in Thin Films of Semiconducting Polymers: Photocarrier Sweep-Out Prior to Deep Trapping

D. Moses, J. Wang, G. Yu, and A. J. Heeger
Phys. Rev. Lett. 80, 2685 – Published 23 March 1998
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Abstract

In thin films, the steady-state photoconductivity is temperature (T) independent in agreement with transient photoconductivity in the subnanosecond regime. As thickness is increased, an activated T dependence emerges. The T independence of the product of the carrier density (n) times the mobility (μ) for thin films results from carrier sweep-out prior to trapping; the crossover from T-independent μ to activated μ occurs when the transit time across the film is comparable to the time required for deep trapping. Thus, steady-state photoconductivity confirms that, in semiconducting polymers, the carrier generation mechanism is T independent, inconsistent with the Onsager model of photocarrier generation.

  • Received 20 October 1997

DOI:https://doi.org/10.1103/PhysRevLett.80.2685

©1998 American Physical Society

Authors & Affiliations

D. Moses1, J. Wang1, G. Yu2, and A. J. Heeger1

  • 1Institute for Polymers and Organic Solids, University of California, Santa Barbara, Santa Barbara, California 93106
  • 2UNIAX Corporation, 6780 Cortona Road, Santa Barbara, California 93117

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Vol. 80, Iss. 12 — 23 March 1998

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