Abstract
The annealing behavior of the divacancy () acceptor levels in silicon is investigated with the use of Schottky-barrier structures formed by the deposition of copper on n-type silicon irradiated with 2-MeV electrons. At temperatures below ∼150 °C an anomalously high annealing rate of the centers is observed, and we believe that the fast-diffusing interstitial passivates their electrical activity and forms neutral complexes. In the temperature range 150–200 °C, where the metal-rich silicide η’-Si forms, the concentration of remains almost constant, and we find no evidence for the injection of silicon self-interstitials during the formation of η’-Si, in contrast to recent experiments.
- Received 5 February 1991
DOI:https://doi.org/10.1103/PhysRevLett.66.3028
©1991 American Physical Society