Sb Overlayers on (110) Surfaces of III-V Semiconductors: Structure and Bonding

C. Mailhiot, C. B. Duke, and D. J. Chadi
Phys. Rev. Lett. 53, 2114 – Published 26 November 1984
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Abstract

The atomic geometry, chemical bonding, and surface-state eigenvalue spectra are predicted for saturated (1×1) ordered monolayers of Sb on the (110) surfaces of GaP, GaAs, GaSb, InP, InAs, and InSb. For GaAs and InP the predicted geometries are in good correspondence with those obtained from low-energy electron diffraction. The predicted electronic structure of these Sb-substrate systems reveals a novel type of bonding not found in either bulk III-V semiconductors or molecular III-V analogs.

  • Received 28 June 1984

DOI:https://doi.org/10.1103/PhysRevLett.53.2114

©1984 American Physical Society

Authors & Affiliations

C. Mailhiot and C. B. Duke

  • Xerox Webster Research Center, Webster, New York 14580

D. J. Chadi

  • Xerox Palo Alto Research Center, Palo Alto, California 94304

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Issue

Vol. 53, Iss. 22 — 26 November 1984

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