Inelastic light scattering from photoproduced carriers is observed in stressed high-purity silicon at low temperatures. The two electronic Raman structures observed correspond to transitions between stress-split valence bands at the zone center. These transitions can be stress-tuned to the $\Gamma$-point phonon energy, thereby exhibiting Fano-type interference between competing scattering amplitudes.

• Received 5 September 1979

DOI:https://doi.org/10.1103/PhysRevLett.43.1950