Electron Relaxation Rates in Bismuth at Microwave and Far-Infrared Frequencies

H. D. Drew and U. Strom
Phys. Rev. Lett. 25, 1755 – Published 28 December 1970
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Abstract

Temperature- and frequency-dependent relaxation rates in bismuth have been measured by studies of the magnetic-field-dependent reflectivity of microwave and far-infrared radiation in single-crystal samples. Retardation effects have been taken into account in the analysis of the cyclotron resonance line shapes. The temperature and frequency dependence of the relaxation rates are analyzed in terms of the theory of electron-electron scattering and the experiment provides strong support for electron-electron dominated scattering in bismuth. The experimental results are inconsistent with an electron-phonon dominated scattering mechanism.

  • Received 19 October 1970

DOI:https://doi.org/10.1103/PhysRevLett.25.1755

©1970 American Physical Society

Authors & Affiliations

H. D. Drew and U. Strom

  • University of Maryland, College Park, Maryland 20742

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Issue

Vol. 25, Iss. 26 — 28 December 1970

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